CHTA92ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHTA92ZPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
104
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
VCE(sat)
collector-emitter saturation
voltage
CONDITIONS
V_CB = -200 V
V_EB = - 3 . 0 V
IC = -1 mA; VCE = -10V
IC = -10 mA; VCE =-10V
IC = -30 mA; VCE =-10V
IC=-20mA, IB=-2.0mA
VBE(sat)
base-emitter saturation voltage IC=-20mA, IB=-2.0mA
fT
transition frequency
IC = 10 mA; VCE=-20V ^;
f = 100MHz
Cob
collector capacitance
VCB=20V, IE=0, f=1.0MHZ
MIN.
−
−
25
40
40
−
−
MAX.
-250
-100
−
-0.5
-0.9
UNIT
nA
nA
−
V
V
50
−
−
6.0
pF