CHTA44ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHTA44ZPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
IEBO
emitter cut-off current
h_FE
DC current gain
CONDITIONS
V_CB = 400 V
VEB=4.0V
IC = 1.0 mA; V CE _{= 10V}
IC = 10mA; VCE = 10V
IC = 50 mA; VCE =10V
IC = 100 mA; VCE =10V
MIN.
−
−
MAX.
100
UNIT
nA
100
nA
40
−
50
200
45
−
20
−
V_CEsat
VBEsat
C_ob
C_Ib
fT
collector-emitter saturation
I_C = 1.0 mA; IB= 0.1m A
−
voltage
I_C =-10 mA; I_B = 1.0 m A
−
I_C =50mA; I_B =5.0mA
−
base-emitter saturation voltage I_C =-10 mA; I_B = 1.0 m A
−
collector capacitance
I_E = i_e = 0; V_CB = 2 0 V; f = 1 MHz −
emitter capacitance
transition frequency
VEB=0.5V,IC=0,f=1.0MHZ
−
I_C = 10 mA; V_CE = 1 0 V;
20
f = 10 MHz
0.40
0.50
0.75
0.75
7.0
130
−
V
V
V
V
pF
pF
MHz