CHTA42ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHTA42ZPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
104
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
VCE(sat)
collector-emitter saturation
voltage
CONDITIONS
V_CB = 200 V
V_EB = 6 . 0 V
IC = 1 mA; VCE = 10V
IC = 10 mA; VCE =10V
IC = 30 mA; VCE =10V
IC=20mA, IB=2.0mA
VBE(sat)
base-emitter saturation voltage IC=20mA, IB=2.0mA
fT
transition frequency
IC = 10 mA; VCE=20V ^;
f = 100MHz
Cob
collector capacitance
VCB=20V, IE=0, f=1.0MHZ
MIN.
−
−
25
40
40
−
−
MAX.
100
100
−
0.5
0.9
UNIT
nA
nA
−
V
V
50
−
−
3.0
pF