CHTA29XPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN Darlington Transistor

RATING CHARACTERISTIC CURVES ( CHTA29XPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
104
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified
SYMBOL
I_CBO
I_EBO
h_FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
V_CB = 30 V
V_EB = 10 V
IC = 1 mA; VCE = 5V
IC = 10 mA; VCE =5V
IC = 100 mA; VCE = 5V
IC = 500 mA; VCE = 5V
VCE(sat)
VBE(sat)
VBE(ON)
fT
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter saturation voltage
transition frequency
I_C = 100 mA; I_B = 0.1 m A
I_C = 100 mA; I_B = 0.1 m A
IC = 10 mA; VCE =5V
I_C = 30 mA; V_CE = 5 V;
f = 100MHz
MIN.
−
−
4000
10000
20000
4000
−
−
−
220(typ)
MAX.
100
100
−
−
−
UNIT
nA
nA
1.0
V
1.5
V
1.4
V
−
MHz