CHTA27ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHTA27ZPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
104
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
h_FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
V_CB = 50 V
V_EB = 1 0 V
IC = 10 mA; VCE = 5V
IC = 100 mA; VCE =5V
VCE(sat)
VBE(ON)
collector-emitter saturation
voltage
base-emitter saturation voltage
I_C = 100 mA; I_B = 0.1 m A
IC⁼¹⁰⁰ mA; VCE=5V
fT
transition frequency
I_C = 10 mA; V_CE = 5 V;
f = 100MHz
MIN.
−
−
10000
10000
−
MAX.
100
100
−
−
1.5
UNIT
nA
nA
V
−
2
125
−
V
MHz