CHT9013PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN Silicon Transisto r

RATING CHARACTERISTIC CURVES ( CHT9013PT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
ICEO
I_EBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
hFE
VCE(sat)
DC current gain
collector-emitter saturation
voltage
CONDITIONS
V_CB = 40V,IE=0
VCE=20V,IB=0
VEB=5V ,IC=0
IC = 50 mA; VCE = 1V
IC = 500 mA; VCE =1V
I_C = 5 00 mA; I_B = 50 m A
VBE(sat)
base-emitter saturation voltage _{IC = 5 00 mA; IB = 50 m A}
fT
transition frequency
I_C = 20 mA; V_CE = 6 V;
f = 30MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification L: 120 to 200, H: 200 to 350, J: 300 to 400
MIN.
−
−
−
120
40
−
−
150
MAX.
0.1
0.1
0.1
UNIT
uA
uA
uA
400
−
0.6
V
1.2
V
−
MHz