CHT858BWPT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – PNP General Purpose Transistor

RATING CHARACTERISTIC ( CHT858BWPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN. Typ. MAX. UNIT
I CBO
BVCBO
BVCEO
BVEBO
h_FE
VCEsat
VBE(on)
collector cut-off current
IE = 0; VCB = 30 V
collector-base breakdown voltage I_C =-10uA
collector-emitter breakdown voltage IC =-10mA
emitter-base breakdown voltage
DC current transfer ratio
I_E =-1uA
VCE /IC =-5V/-2 mA
collector-emitter saturation
voltage
I_C = -10 mA ; I_B = -0.5 mA
I_C = -100 mA ; I_{B= -5 mA}
base-emitter satur ation voltage
I_C = -10 mA;V_{CE = -5.0 V}
−
−
-30 −
-30 −
-5
−
125 −
−
−
−
−
-0.6 −
15 nA
−V
−V
−
V
800
-300 mV
-650 mV
-0.75 ^V
Cob
collector output capacitance
I_{E = 0; VCB} = -10V _{; f = 1 MH} z
−
4.5
− pF
fT
transition frequency
IE = 2 0 mA; V_CE= - 5 V ; f = 100MHz −
200 − MHz
Note
1. Pulse test: t _p ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800
RATING CHARACTERISTIC CURVES ( CHT858BWPT)
fig1.Grounded emmitter output characteristics (1)
100
0.7
0.6
80
0.5
60
0.4
0.3
40
20
0.2
iB=0mA
0.1
0
0
1.0
O
Ta=25 C
2.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
fig2.Grounded emmitter output characteristics (2)
10
O
50
Ta=25 C
8.0
45
40
35
6.0
30
25
4.0
20
2.0
0
0
15
10
5
IB=0uA
1.0
2.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)