CHT856BWPT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – PNP Muti-Chip General Purpose Amplifier

RATING CHARACTERISTIC ( CHT856BWPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
BVCBO
BVCEO
BVEBO
h_FE
VCEsat
collector cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
DC current transfer ratio
collector-emitter saturation
voltage
I_E = 0; V_CB = -30 V
IC = 0; V_CB = -30 V; TA = 150 ^O_C
IC =-10uA
IC =-10mA
I_E =-1uA
VCE /IC =-5V/-2 mA
I_C = -10 mA ; I_B= -0.5 mA
I_C = -100 mA ; I_{B= -5 mA}
−
−
-80
-65
-5
-125
−
−
VBEsat _{base-emitter satur ation voltage}
I_C = -10mA;IB=-0.5mA
−
Cib
emitter input capacitance
I_{C = 0; VCB} =- 0.5V; _{f = 1 MH z}
−
Cob
collector output capacitance
I_{E = 0; VCB} = -10V _{; f = 1 MH z}
−
fT
transition frequency
IE = -20 mA; V_CE = 5 V ; f = 100 MHz −
Typ.
−
−
−
−
−
−
−
−
-700
8
3
200
MAX. UNIT
-15 nA
-5 uA
−V
−V
−V
-800
-300 mV
-650 mV
− mV
− ^pF
− pF
− MHz
Note
1. Pulse test: t _p ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800
RATING CHARACTERISTIC CURVES ( CHT856BWPT)
Typical Pulsed Current Gain
vs Collector Current
500
° ^{400 125 C}
V _CE = 5V
300
25 _°C
200
° ^{100 - 40 C}
0
0.01
0 .1
1
10
100
I _C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0. 3
0.25
β = 10
0. 2
0.15
0. 1
25 _°C
0.05
0
0.1
125 _°C
- 40 _°C
1
10
10 0 300
I C - COLLECTOR CURRE NT (mA)