CHT8550PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – EPITAXIAL Transistor

RATING CHARACTERISTIC CURVES ( CHT8550PT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciped.
SYMBOL
PARAMETER
V_(BR)CBO collector-base breakdown voltage
V_(BR)CEO collector-emitter breakdown voltage
V_(BR)EBO emitter-base breakdown voltage
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_{CEsat collector-emitter saturation}
V_BEon
base-emitter voltage
Ccb
output capacitance
fT
transition frequency
CONDITIONS
MIN.
I_C = -10uA ; I_E = 0A
-25
I_C = -1mA ; I_B = 0A
-20
I_E = -10uA ; I_C = 0A
-5
V_CB = -20V
−
V_EB = -6V
−
IC = -150 mA; VCE = -1V
100
I_C = -500 mA; I_B = -50 mA
−
I_C = -150 mA; V_CE = -1.0V
−
VCB=-10V; f=1.0MHZ; IE=0
−
VCB=-10V; Ic=-20mA; f=100MHz 150
MAX.
−
−
−
-1.0
-100
500
-500
-1000
10
−
UNIT
V
V
V
uA
nA
mV
mV
pF
MHz
2. hFE: C Classification: 100~200
D Classification: 150~300
E Classification: 250~500