CHT84WPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – P-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHT84WPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSSF
I_GSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V_GS = 0 V, I_D = -250 µA
V_DS = -50 V, V_GS = 0 V
V_DS = -25 V, V_GS = 0 V
V_GS = 20 V, V_DS = 0 V
V_GS = -20 V, V_DS = 0 V
-50 -75
V
-15 µA
-100 nA
10 nA
-10 nA
ON CHARACTERISTICS (Note 1)
V_GS(th)
Gate Threshold Voltage
V_DS = VGS, I_D = 1.0 mA
-0.8 -1.6 -2.0 V
R_DS(ON) Static Drain-Source On-Resistance _{VGS = -5.0 V, ID = 0.1 A}
g_FS
Forward Transconductance
V_DS = -25 V , I_D = 100 m A
6
10
Ω
0.05
S
DYNAMIC CHARACTERISTICS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
t_on
Turn-On Time
t_off
Turn-Off Time
V_DS = -25 V, V_GS = 0 V,
f = 1.0 MHz
V_DD = -30 V
I_D = -270 mA, V_GS = -10 V,
R_GEN = 50 Ω
45
pF
25
12
10
nS
18