CHT848BWPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN General Purpose Transistor

RATING CHARACTERISTIC ( CHT848BWPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current transfer ratio
VBEsat
collector-base saturation
voltage
VCEsat collector-emitter saturation
voltage
VBE(on) _{base-emitter satur ation voltage}
Cib
emitter input capacitance
Cob
collector output capacitance
fT
transition frequency
NF
noise figure
CONDITIONS
IE ⁼ 0; VCB = 30 V
VCE /IC =5V/2 mA
MIN.
−
110
Typ.
−
−
MAX. UNIT
15 nA
800
I_C = 10 mA ; I_B = 0.5 mA
−
I_C = 100 mA ; I_{B= 5 mA}
−
I_C = 10 mA ; I_B = 0.5 mA
−
I_C = 100 mA ; I_{B= 5 mA}
I_C = 2 mA;V_{CE= 5.0 V}
I_C = 10mA;V_{CE= 5.0 V}
I_{C = 0; VCB} = 0.5V _{; f = 1 MH z}
I_{E = 0; VCB = 10V ; f = 1 MH z}
−
0.58
−
−
−
IE = 10 mA; V_CE = 5 V ; f = 100 MHz −
VCE=5V , IC=200uA , F=1KHz , RG=2K
−
700 −
900 −
90 250
200 600
0.66 0.70
− _0.72
9
−
3.5
6
300 −
2
10
mV
mV
mV
mV
V
V
pF
pF
MHz
dB
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
2. hFE Classification P:110 to 220 Q: 200 to 450, Y: 420 to 800
RATING CHARACTERISTIC CURVES ( CHT848BWPT)
fig1.Static Characteristic
100
I
B
=
400µA
80
I_B = 350µA
I
B
=
300µA
60
I
B
=
250µA
I
B
=
200µA
40
I
B
=
150µA
I_B = 100µA
20
I_B = 50µA
0
0
4
8
12
16
20
V_CE[V], COLLECTOR-EMITTER VOLTAGE
fig2.DC current Gain
10000
VCE = 5V
1000
100
10
1
10
100
1000
IC[mA], COLLECTOR CURRENT