CHT846BPT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – NPN General Purpose Transistor

RATING CHARACTERISTIC ( CHT846BPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
collector cut-off current
I_E = 0; V_CB = 30 V
−
IC = 0; V_CB = 30 V; TA = 150 ^O_C
−
BVCBO collector-base breakdown voltage IC =10uA
80
BVCEO collector-emitter breakdown voltage I_C =10mA
65
BVEBO emitter-base breakdown voltage I_E =1uA
6
h_FE
DC current transfer ratio
VCE /IC =5V/2 mA
110
collector-emitter saturation
I_C = 10 mA ; I_B = 0.5 mA
−
VCEsat _voltage
I_C = 100 mA ; I_{B= 5 mA}
−
VBE(on) _{base-emitter satur ation voltage}
I_C = 10 mA;V_{CE= 5.0 V}
0.58
Cib
emitter input capacitance
I_{C = 0; VCB} = 0.5V _{; f = 1 MH z}
−
Cob
collector output capacitance
I_{E = 0; VCB} = -10V _{; f = 1 MH z}
−
fT
transition frequency
IE = -20 mA; V_CE = 5 V ; f = 100 MHz −
Typ.
−
−
−
−
−
−
−
−
−
8
3
200
MAX. UNIT
15 nA
5 uA
−V
−V
−
V
800
250 mV
600 mV
0.77 ^V
− ^pF
− pF
− MHz
Note
1. Pulse test: t _p ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 110 to 220, R: 200 to 450, S: 420 to 800
RATING CHARACTERISTIC CURVES ( CHT846BPT)
fig1.Griunded emitter output characteristics
100
600
500
400
50
300
200
100
0
IB=0uA
Ta=25^OC
0
5
10
COLLECTOR-EMITTERVOLTAGE : VCE(V)
fig2.Collector-Emitter Saturation
Voltage vs Collector Current
Ta=25^OC
IC/IB=10
0.3
0.2
0.1
0
1.0
10
100
I _C - COLLECTOR CURRENT (mA)
1000