CHT817WPT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – NPN Muti-Chip General Purpose Amplifier

RATING CHARACTERISTIC ( CHT817WPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
105
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
h_FE
V_CEsat
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
CONDITIONS
I_E = 0; V_CB = 25 V
I_C = 0; V_CB = 25 V; TA = 150 ^OC
I_C = 0; V_EB = 4 V
IC = 100 mA; VCE =1.0V; note 1
I_C = 500 mA ; I_B = 50 mA
V_BEsat
base-emitter saturation voltage I_C = 500 mA; _IB = 50mA
MIN.
−
−
−
100
−
MAX.
100
50
100
600
700
UNIT
nA
uA
nA
mV
1.2
V
C_c
collector capacitance
f_T
transition frequency
I_E = i_e = 0; V_CB = 10V ; f = 1 MHz −
6.0
I_C = 50 mA; V_CE = 5 V ;
f = 100 MHz
170
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600
pF
MHz