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CHT807PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – PNP Muti-Chip General Purpose Amplifier
RATING CHARACTERISTIC ( CH807PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Device mounted on ceramic substrate 0.7mm ; 2.5cm2ares.
CONDITIONS
note 1
VALUE
430
UNIT
°C/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
VCEsat
hFE
VBE
CCBO
fT
emitter-base cut-off current
collector-emitter saturation volt
DC current gainI
base-emitter voltage
collector-base capacitance
transition frequency
CONDITIONS
VCB = -20 V
VCB = -25 V; Tj = 150 OC
VEB = - 4 V
IC =- 500 mA ; IB = -50 mA
IC = -100 mA; VCE= -1.0V
IC = -300 mA; VCE= -1.0V
IC = -300 mA; VCE= -1.0V
VCB = 10V ; f = 1 MHz
IC = 10 mA; VCE = 5 V ;
f = 50 MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600
MIN.
−
−
−
−
100
60
−
80
MAX.
-100
-50
-100
-700
600
−
-1.2
12(typ.)
−
UNIT
nA
uA
nA
mV
V
pF
MHz