CHT807N1PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – PNP Muti-Chip General Purpose Amplifier

RATING CHARACTERISTIC ( CHT807N1PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Device mounted on ceramic substrate 0.7mm ; 2.5cm²ares.
CONDITIONS
note 1
VALUE
430
UNIT
°C/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CES
collector-emitter cut-off current
I_EBO
V_CEsat
h_FE
V_BE
C_CBO
f_T
emitter-base cut-off current
collector-emitter saturation volt
DC current gainI
base-emitter voltage
collector-base capacitance
transition frequency
CONDITIONS
V_CE = 45 V
V_CB = 25 V; Tj = 150 ^OC
V_EB = - 4 V
I_C =- 500 mA ; I_B = -50 mA
IC = -100 mA; VCE= -1.0V
I_C = -300 mA; VCE= -1.0V
I_C = -300 mA; VCE= -1.0V
V_CB = 10V ; f = 1 MHz
I_C = 10 mA; V_CE = 5 V ;
f = 50 MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600
MIN.
−
−
−
−
100
60
−
100
MAX.
-100
-50
-100
UNIT
nA
uA
nA
-700
mV
600
−
-1.2
V
12
pF
−
MHz