CHT8050PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – EPITAXIAL Transistor

RATING CHARACTERISTIC CURVES ( CHT8050PT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciped.
SYMBOL
PARAMETER
V_(BR)CBO collector-base breakdown voltage
V_(BR)CEO collector-emitter breakdown voltage
V_(BR)EBO emitter-base breakdown voltage
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_{CEsat collector-emitter saturation}
V_BEon
base-emitter voltage
Ccb
output capacitance
fT
transition frequency
CONDITIONS
I_C = -10uA ; I_E = 0A
I_C = -1mA ; I_B = 0A
I_E = -10uA ; I_C = 0A
V_CB = 20V
V_EB = 5V
IC = 150 mA; VCE = 1V
I_C = 500 mA; I_B = 50 mA
I_C = 150 mA; V_CE = 1.0V
VCB=-10V; f=1.0MHZ; IE=0
VCB=10V; Ic=20mA; f=100MHz
MIN.
25
20
5
−
−
150
−
−
−
150
MAX.
−
−
−
1.0
100
500
500
1000
10
−
UNIT
V
V
V
uA
nA
mV
mV
pF
MHz
2. hFE: D Classification: 150~300
E Classification: 250~500