CHT5988ZPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – PNP Switching Transistor

RATING CHARACTERISTIC CURVES ( CHT5988ZPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
CONDITIONS
VALUE
62.5
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
PARAMETER
CONDITIONS
Collector-Base Breakdown Voltage IC= -100uA
Collector-Emitter Breakdown Voltage IC= -10mA
Emitter-Base Breakdown Voltage
IE= -100uA
Collector Cut-Off Current
VCB= -80V
Emitter Cut-Off Current
VEB= -6V
VCE= -1V , IC= -10mA
DC Current Gain
VCE= -1V , IC= -2A
VCE= -1V , IC= -5A
VCE= -1V , IC= -10A
Collector-Emitter Saturation Voltage
IC= -100mA , IB= -10mA
IC= -1A , IB= -100mA
IC= -2A , IB= -200mA
Base-Emitter Saturation Voltage
IC= -5A , IB= -500mA
IC= -5A , IB= -500mA
Base-Emitter on Voltage
Transition Frequency
Collector Output Capacitance
VCE= -1V , IC= -5A
VCE= -10V , IE= -100mA
VCB= -10V , IE= 0A , f=1MHz
MIN.
MAX.
-100
−
-60
−
-6
−
−
-50
−
-10
100
−
120
300
60
−
10
−
−
-50
−
-140
−
-210
−
-460
−
-1.27
−
-1.2
100
−
72(Typ.)
UNIT
V
V
V
nA
nA
mV
V
V
MHz
pF