CHT589PT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP Silicon Transistor

RATING CHARACTERISTIC CURVES ( CHT589PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
h_FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I_E = 0; V_CB = -30 V
I_C = 0; V_EB = - 4 V
I_C = -1 mA; V_CE= -2V
I_C = -500mA; V_CE = -2V
I_C = -1A; V_CE = - 2V
IC = -2A; V_CE = -2V
V_CEsat
collector-emitter saturation
voltage
Ic = -0.5A; IB=-50mA
Ic = -1A; IB=-100mA
I_C = -2A; I_B = -200 m A
VALUE
357
UNIT
K/W
MIN.
−
−
100
100
80
40
MAX.
-100
-100
−
300
−
−
UNIT
nA
nA
−
-0.25
V
−
-0.35
V
−
-0.65
V
V_BEsat
base-emitter saturation voltage ^IC ^{= -1A; I}B ^{= -100 mA}
−
-1.2
V
V_BEon
C_obo
base-emitter turn-on voltage
output capacitance
I_C = -1A; V_CE = -2V
V_CB = -10V; _f = 1 MHz
−
-1.1
V
−
15
pF
f_T
transition frequency
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
I_C = -100 mA; V_CE = - 5 V;
f = 100 MHz
100
−
MHz