CHT5824XPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN Silicon Transisto r

RATING CHARACTERISTIC CURVES ( CHT5824XPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
ICEO
collector cut-off current
I_EBO
emitter cut-off current
CONDITIONS
V_CB = 40V,IE=0
VCE=50V,IB=0
VEB=4V ,IC=0
MIN.
−
−
−
MAX. UNIT
1.0
uA
1.0
uA
1.0
uA
hFE
VCE(sat)
DC current gain
collector-emitter saturation
voltage
Cob
collector output capacitance
fT
transition frequency
Note : _{Pulse test: tp ≤ 300uSec; δ ≤ 0.02.}
IC = 100 mA; VCE = 2V
120
390
I_C = 20 00 mA; I_B = 200 m A
−
0.5
I_E = 0 ; V_CB = 1 0 V; f = 1 M H Z _20(typ)
−
I_C = 100 mA; V_CE = 1 0 V
f=10MHZ
200(typ) ^−
V
pF
MHz