CHT55N1PT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP General Purpose Transistor

RATING CHARACTERISTIC CURVES ( CHT55N1PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
357
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
h_FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I_E = 0; V_CB = -60 V
I_C = 0; V_EB = 60 V
V_CE = -1.0 V; note 1
I_C = -10 mA
I_C = -100 mA
MIN.
−
−
MAX.
-0.1
-0.1
UNIT
uA
uA
100
−
100
−
V_CEsat
V_BEsat
C_cb
f_T
collector-emitter saturation
I_C = -100 mA; I_B =-10 mA
−
voltage
base-emitter saturation voltage I_C = -100 mA; V_CE = -1.0 V
−
collector-base capacitance
I_E = i_e = 0; V_CB =-20V ; f = 1 MHz −
transition frequency
I_C = 100 mA; V_CE =-1.0 V ;
50
f = 100 MHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
-0.25
-1.2
3
−
V
V
pF
MHz