CHT5551SPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT5551SPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1.Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
357
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_CBO
IEBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
CONDITIONS
V_CB = 120 V
V_CB = 120 V,TA=100^OC
VEB=4.0V
MIN.
−
−
−
MAX.
50
50
50
UNIT
nA
uA
nA
h_FE
DC current gain
IC = 1.0 mA; VCE _{= 5V}
IC = 10mA; VCE = 5V
IC = 50 mA; VCE =5V
80
−
80
250
30
−
V_CEsat
V_BEsat
C_ob
hfe
fT
F
collector-emitter saturation
I_C = 10 mA; I_B = 1.0 m A
−
voltage
I_C =-50 mA; I_B = 5.0 m A
−
base-emitter saturation voltage ^{IC =10mA; IB =1.0mA}
I_C =-50 mA; I_B = 5.0 m A
−
−
collector capacitance
I_E = i_e = 0; V_CB = 1 0 V; f = 1 MHz −
VCE=10V,IC=1.0mA,f=1.0KHz
50
transition frequency
noise Þgure
I_C = 10 mA; V_CE = 1 0 V;
100
f = 1.0 MHz
I_C = 200 mA; V_CE= 5 V; R_S = 1 0 Ω;
f =10Hz to 15.7KHz
−
0.15
0.2
1.0
1.0
6.0
200
300
8.0
V
V
V
V
pF
MHz
dB