CHT5401ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT5401ZPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1.Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
PARAMETER
collector cut-off current
emitter cut-off current
h_FE
DC current gain
CONDITIONS
V_CB = -100 V
VEB=3.0V
IC = -1.0 mA; VCE = -5V
IC = -10mA; VCE = 5V
IC =- 50 mA; VCE =5V
VALUE
357
UNIT
K/W
MIN.
−
−
50
60
50
MAX.
-50
-50
−
240
−
UNIT
nA
nA
V_CEsat
V_BEsat
C_ob
hfe
fT
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
I_C = -10 mA; I_B = -1.0 m A
−
I_C =--50 mA; I_B = -5.0 m A
−
I_C =-10mA; I_B=-1.0mA
−
I_C =--50 mA; I_B = -5.0 m A
−
I_E = i_e = 0; V_CB = - 1 0 V; f = 1 MHz −
VCE=-10V,IC=-1.0mA,f=1.0KHz
40
transition frequency
noise Þgure
I_C =- 50 mA; V_CE = 1 0 V;
100
f = 1.0 MHz
I_C = 200 µA; V_CE= 5 V; R_S = 1 0 Ω;
f =10Hz to 15.7KHz
−
-0.2
V
-0.5
V
-1.0
V
-1.0
V
6.0
pF
200
300 MHz
8.0 dB