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CHT5401SPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP SILICON Transistor | |||
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RATING CHARACTERISTIC CURVES ( CHT5401SPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1.Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÃed.
SYMBOL
ICBO
IEBO
PARAMETER
collector cut-off current
emitter cut-off current
hFE
DC current gain
CONDITIONS
VCB = -120 V
VEB=3.0V
IC = -1.0 mA; VCE = -5V
IC = -10mA; VCE = -5V
IC = -50 mA; VCE = -5V
VALUE
420
UNIT
K/W
MIN.
â
â
50
60
50
MAX.
-50
-50
â
240
â
UNIT
nA
nA
VCEsat
VBEsat
Cob
hfe
fT
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
IC = -10 mA; IB = -1.0 m A
â
IC =--50 mA; IB = -5.0 m A
â
IC =-10mA; IB=-1.0mA
â
IC =--50 mA; IB = -5.0 m A
â
IE = ie = 0; VCB = - 1 0 V; f = 1 MHz â
VCE=-10V,IC=-1.0mA,f=1.0KHz
40
transition frequency
noise Ãgure
IC =- 10 mA; VCE = 1 0 V;
100
f = 100 MHz
IC = 200 µA; VCE= 5 V; RS = 1 0 â¦;
f =10Hz to 15.7KHz
â
-0.2
V
-0.5
V
-1.0
V
-1.0
V
6.0
pF
200
300 MHz
8.0 dB
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