CHT5338ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN Silicon Transisto r

RATING CHARACTERISTIC CURVES ( CHZ5338ZPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
h_FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I_E = 0; V_CB = 100V
I_C = 0; V_EB = 6 V
V_CE = 2 V; note 1
I_C = 500mA
I_C = 2.0 A
I_C = 5.0 A
MIN.
−
−
MAX.
10
100
UNIT
nA
nA
30
−
30
120
20
−
V_CEsat
V_BEsat
C_c
C_e
f_T
collector-emitter saturation
I_C = 2.0 A; I_B = 2 0 0 mA
−
voltage
I_C = 5.0 A; I_B = 5 0 0 mA
−
base-emitter saturation voltage I_C = 2.0 A; I_B = 2 0 0 mA
−
collector capacitance
I_C = 5.0 A; I_B = 5 0 0 mA
−
I_E = i_e = 0; V_CB = 1 0 V; f = 1 MHz
−
emitter capacitance
I_C = i_c = 0; V_BE = 2V;
−
f = 1 MHz
transition frequency
I_C = 500 mA; V_CE = 10 V;
30
f = 10 MHz
0.7
1.2
1.2
1.8
250
1000
−
V
V
V
V
pF
pF
MHz
Switching times (between 10% and 90% levels);
t_d
delay time
t_r
rise time
t_s
storage time
t_f
fall time
VCC=40V,VBE=3.0V,IC=2.0A,
−
IB1=200mA
−
VCC=40V,IC=2.0A,IB1=IB2=200mA ^−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
100
ns
100
ns
2.0
ns
200
ns