CHT44PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – NPN High Voltage Transistor

RATING CHARACTERISTIC CURVES ( CHT44PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
357
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_cb
f_T
PARAMETER
CONDITIONS
collector cut-off current
emitter cut-off current
DC current gain
I_E = 0; V_CB = 4 0 0 V
I_C = 0; V_EB = 4 V
V_CE = 10V; note 1;
I_C = 1.0 mA
I_C = 10 mA
I_C = 50 mA
collector-emitter saturation
voltage
I_C = 10 mA; I_B = 1 mA
base-emitter saturation voltage
collector-base capacitance
transition frequency
I_C = 10 mA; I_B = 1 mA
I_E = i_e = 0; V_CB = 2 0 V ; f = 1 MHz
I_C = 10 mA; V_CE = 20 V;
f = 100 MHz
MIN.
−
−
40
50
45
−
−
−
50
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
0.1
0.1
UNIT
uA
uA
−
240
−
500
mV
750
mV
7
pF
−
MHz