CHT4413UPNPT Datasheet, PDF (2/5 Pages) Chenmko Enterprise Co. Ltd. – PNP&NPN Muti-Chip General Purpose Transistor

TR2 CHT4403 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
open emitter
open base
open collector
T_amb ≤ 25 °C; note 2
T_stg
T_j
T_amb
storage temperature
junction temperature
operating ambient temperature
Note
2. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−65
−
−65
MAX.
-40
-40
-5
-600
200
+150
150
+150
UNIT
V
V
V
mA
mW
°C
°C
°C
TR1 CHT4401 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciped.
SYMBOL
PARAMETER
V_(BR)CBO collector-base breakdown voltage
V_(BR)CEO collector-emitter breakdown voltage
V_(BR)EBO emitter-base breakdown voltage
I_CEX
collector cut-off current
I_BL
base cut-off current
h_FE
DC current gain
V_{CEsat collector-emitter saturation}
V_BEsat
Ccb
Ceb
hie
hre
hfe
hoe
f_T
t_d
t_r
t_s
t_f
base-emitter saturation voltage
output capacitance
input capacitance
input impedance
voltage feedback ratio
small signal current gain
output impedance
transition frequency
delay time
rise time
storage time
fall time
CONDITIONS
I_C = 100uA ; I_E = 0A
I_C = 1mA ; I_B = 0A
I_E = 100uA ; I_C = 0A
V_EB(OFF) = 0.4V ; V_CE = 35 V
V_EB(OFF) = 0.4V ; V_CE = 35 V
IC = 100uA; VCE =I 1V
I_C = 1 mA; VCE = 1V
IC = 10 mA; VCE = 1V
IC = 150 mA; VCE = 1V
I_C = 500 mA; VCE = 2V
I_C = 150 mA; I_B = 15 mA
I_C = 500 mA; I_B = 50 mA
I_C = 150 mA; I_B = 15 mA
I_C = 500 mA; I_B = 50 mA
VCB=5.0V; f=1.0MHZ; IE=0
VEB=0.5V; f=1.0MHZ; IC=0
VCE=10V; f=1.0KHZ; IC=1.0mA
I_C = 20 mA; V_CE = 10 V;
f = 100 MHz
VCC=30V; IC=150mA
VBE(off)=2.0V; IB1=15mA
VCC=30V; IC=150mA
IB1=IB2=15mA
MIN.
60
40
6
−
−
20
40
80
100
40
−
−
750
−
−
−
1.0
0.1
40
1.0
250
−
−
−
−
MAX.
−
−
−
100
100
−
−
−
300
−
400
750
950
1200
6.5
30
15
8.0
500
30
−
15
20
225
30
UNIT
V
V
V
nA
nA
mV
mV
mV
mV
pF
pF
KΩ
x10^-4
µ_S
MHz
nS
nS
nS
nS