CHT4403WPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – General Purpose Transistor

RATING CHARACTERISTIC CURVES ( CHT4403WPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciped.
SYMBOL
PARAMETER
V_(BR)CBO collector-base breakdown voltage
V_(BR)CEO collector-emitter breakdown voltage
V_(BR)EBO emitter-base breakdown voltage
I_CEX
collector cut-off current
I_BL
base cut-off current
h_FE
DC current gain
V_{CEsat collector-emitter saturation}
V_BEsat
Ccb
Ceb
hie
hre
hfe
hoe
f_T
t_d
t_r
t_s
t_f
base-emitter saturation voltage
output capacitance
input capacitance
input impedance
voltage feedback ratio
small signal current gain
output impedance
transition frequency
delay time
rise time
storage time
fall time
CONDITIONS
MIN.
I_C = -100uA ; I_E = 0A
-40
I_C = -1mA ; I_B = 0A
-40
I_E = -100uA ; I_C = 0A
-6
V_EB(OFF) = -0.4V ; V_CE = -35 V
−
V_EB(OFF) = -0.4V ; V_CE = -35 V
−
IC = -100uA; VCE = -1V
30
I_C = -1 mA; VCE = -1V
60
IC = -10 mA; VCE = -1V
100
IC = -150 mA; VCE = -2V
100
I_C = -500 mA; VCE = -2V
20
I_C = -150 mA; I_B = -15 mA
−
I_C = -500 mA; I_B = -50 mA
−
I_C = -150 mA; I_B = -15 mA
I_C = -500 mA; I_B = -50 mA
-750
−
VCB=-10V; f=1.0MHZ; IE=0
−
VEB=-0.5V; f=1.0MHZ; IC=0
−
1.5
0.1
VCE=-10V; f=1.0KHZ; IC=-1.0mA
60
1.0
I_C = -20 mA; V_CE = - 10 V
200
f = 100 MHz
VCC=-30V; IC=-150mA
−
VBE(off)=-2.0V; IB1=-15mA
−
VCC=-30V; IC=-150mA
−
IB1=IB2=-15mA
−
MAX.
−
−
−
-100
-100
−
−
−
300
−
-400
-750
-950
-1300
8.5
30
15
8.0
500
100
−
15
20
225
30
UNIT
V
V
V
nA
nA
mV
mV
mV
mV
pF
pF
KΩ
x10^-4
µ_S
MHz
nS
nS
nS
nS