CHT4401SPT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – NPN Switching Transistor

RATING CHARACTERISTIC CURVES ( CHT4401SPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
200
UNIT
°C/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
PARAMETER
CONDITIONS
MIN.
collector cut-off current
I_E = 0; V_CB = 60 V
−
emitter cut-off current
I_C = 0; V_EB = 6 V
−
DC current gain
V_CE = 1 V; note 1
I_C = 0.1 mA
20
I_C = 1 mA
40
I_C = 10 mA
80
I_C = 1 50 mA
100
VCE ₌ 2 V;note 2
I_C = 500 mA
40
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
I_C = 150 mA; I_B = 1 5 mA
−
I_C = 500 mA; I_B = 5 0 mA
−
I_C = 150 mA; I_B = 15 mA
750
I_C = 500 mA; I_B = 5 0 mA
−
I_E = i_e = 0; V_CB = 5 V; f = 1 4 0 K Hz −
I_C = i_c = 0; V_BE = 500 mV;
−
f = 140KHz
transition frequency
I_C = 20 mA; V_CE = 10 V;
250
f = 100 MHz
MAX.
50
50
−
−
−
300
−
400
750
950
1200
6.5
30
−
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
Switching times (between 10% and 90% levels);
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 150 mA; I_Bon = 15 mA;
−
I_Boff = −1 5 mA
−
−
−
−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
35
ns
15
ns
20
ns
250
ns
200
ns
60
ns