CHT4126WPT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – General Purpose Transistor

RATING CHARACTERISTIC CURVES ( CHT4126WPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
h_FE
h_FE
V_CEsat
DC current gain
DC current gain
collector-emitter saturation
V_BEsat
Cobo
Cibo
base-emitter saturation voltage
output capacitance
input capacitance
f_T
transition frequency
CONDITIONS
MIN.
I_C = -10uA ; I_E = 0A
-25
I_C = -1mA ; I_B = 0A
-25
I_E = -10uA ; I_C = 0A
-4
I_E = 0; V_CB = -20 V
−
I_C = 0; V_EB = - 3 V
−
IC = -50 mA; VCE I= -1V; note 3
60
IC = -2 mA; VCE = -1V
120
I_C = -50 mA; I_B = -5 mA
−
I_C = -50 mA; I_B = -5 mA
−
I_E = i_e = 0; V_CB = - 5 V ; f = 1 MHz −
I_E = i_e = 0; V_CB = - 5 V ; f = 1 MHz −
I_C = -10mA; V_CE = - 2 0 V ;
250
f = 100 MHz
Note
3. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
−
−
−
-50
-50
−
360
-400
-950
4.5
10
−
UNIT
V
V
V
nA
nA
mV
mV
pF
pF
MHz