CHT4124PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – General Purpose Transistor

RATING CHARACTERISTIC CURVES ( CHT4124PT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
V_(BR)CBO collector-base breakdown voltage
V_(BR)CEO collector-emitter breakdown voltage
V_(BR)EBO emitter-base breakdown voltage
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
h_FE
V_CEsat
DC current gain
DC current gain
collector-emitter saturation
V_BEsat
Cobo
base-emitter saturation voltage
output capacitance
Cibo
input capacitance
f_T
transition frequency
CONDITIONS
I_C = 10uA ; I_E = 0A
I_C = 1mA ; I_B = 0A
I_E = 10uA ; I_C = 0A
I_E = 0; V_CB = 20 V
I_C = 0; V_EB = 3 V
IC = 50 mA; VCE =I 1V; note 3
IC = 2 mA; VCE = 1V
I_C = 50 mA; I_B = 5 mA
I_C = 50 mA; I_B = 5 mA
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
I_C = 10 mA; V_CE = 20 V;
f = 100 MHz
MIN.
30
25
5
−
−
60
120
−
−
−
−
300
MAX.
−
−
−
50
50
−
360
300
950
4
8
−
UNIT
V
V
V
nA
nA
mV
mV
pF
pF
MHz
Note
3. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.