CHT4033XPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT4033XPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
PARAMETER
collector cut-off current
emitter cut-off current
h_FE
DC current gain
CONDITIONS
I_E = 0; V_CB = 60 V
I_C = 0; V_EB = 5 V
IC = 0.1 mA; V CE _{= 5V}
IC = 100 mA; VCE = 5V
IC = 500 mA; VCE =5V
IC = 1.0A; VCE = 5V
VALUE
357
UNIT
K/W
MIN.
−
−
75
100
70
25
MAX.
50
10
−
300
−
−
UNIT
nA
nA
V_CEsat
V_BEsat
C_ob
C ib
fT
collector-emitter saturation
I_C = 150 mA; I_B = 15 m A
−
voltage
I_C =-500 mA; I_B = 50 m A
−
base-emitter saturation voltage ^{IC =150 mA; IB =15 mA}
I_C =-500 mA; I_B = 50 m A
−
−
collector capacitance
I_E = i_e = 0; V_CB = 1 0 V; f = 1 MHz −
emitter capacitance
I_C = i_c = 0; V_BE = 500 mV;
−
f = 1 MHz
transition frequency
I_C = 50 mA; V_CE = 1 0 V;
100
f = 1.0 MHz
0.15
0.5
0.9
1.1
20
110
−
V
V
V
V
pF
pF
MHz