CHT32CZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT32CZPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CEO
collector cut-off current
IEBO
emitter cut-off current
h_FE
DC current gain
CONDITIONS
V_CE= -60 V
VEB=-5.0V
IC = -1.0A; VCE= -4V
IC = -3.0A; VCE = -4V
MIN.
−
MAX.
-300
UNIT
uA
−
-1
mA
25
−
10
100
V_CEsat
VBEON
fT
collector-emitter saturation
voltage
IC=-3.0A,IB=-375mA
base-emitter saturation voltage I_C =- 3.0A; VCE = -4V
transition frequency
I_C = -500mA; V_CE = 1 0 V;
f = 10 MHz
−
-1.2
V
−
-1.8
V
3.0
−
MHz