CHT3055ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT3055ZPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CEO
collector cut-off current
IEBO
emitter cut-off current
h_FE
DC current gain
CONDITIONS
V_CE=30 V
VEB=7.0V
IC = 4.0A; VCE= 4V
IC =6.0A; VCE = 4V
MIN.
−
MAX.
700
UNIT
uA
−
5.0
mA
20
70
5.0
−
V_CEsat
VBEON
fT
collector-emitter saturation
voltage
IC=4.0A,IB=400mA
base-emitter saturation voltage I_C = 4.0A; VCE = 4V
transition frequency
I_C = 500mA; V_CE = 1 0 V;
f = 1.0MHz
−
1.1
V
−
1.5
V
2.5
−
MHz