CHT3019PT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN Switching Transistor

RATING CHARACTERISTIC CURVES ( CHT3019PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
PARAMETER
collector cut-off current
emitter cut-off current
h_FE
DC current gain
CONDITIONS
I_E = 0; V_CB = 90 V
I_C = 0; V_EB = 5 V
IC = 0.1 mA; VCE _{= 10V}
IC = 1.0 mA; VCE = 10V
IC = 150 mA; VCE =10V
IC = 500 mA; VCE = 10V
IC = 1.0 A; VCE = 10V
VALUE
357
UNIT
K/W
MIN.
−
−
50
90
100
50
15
MAX.
10
10
−
−
300
−
−
UNIT
nA
nA
V_CEsat
V_BEsat
C_ob
C ib
fT
F
collector-emitter saturation
I_C = 150 mA; I_B = 15 m A
−
voltage
I_C =-500 mA; I_B = 50 m A
−
base-emitter saturation voltage I_C =150 mA; I_B =15 mA
−
collector capacitance
emitter capacitance
transition frequency
noise Þgure
I_E = i_e = 0; V_CB = 1 0 V; f = 1 MHz −
I_C = i_c = 0; V_BE = 500 mV;
−
f = 1 MHz
I_C = 50 mA; V_CE = 1 0 V;
100
f = 1.0 MHz
I_C = 100 µA; V_CE= 1 0 V; R_S = 1 kΩ; _−
f = 1.0kHz
0.2
V
0.5
V
1.1
V
12
pF
60
pF
−
MHz
4.0
dB