|
CHT2907VPT Datasheet, PDF (2/6 Pages) Chenmko Enterprise Co. Ltd. – PNP Switching Transistor | |||
|
◁ |
RATING CHARACTERISTIC CURVES ( CHT2907VPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÃed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = 0; VCB = -60 V
â
IC = 0; VCB = -60 V; Tj = 125 OC
â
IC = 0; VEB = 5 V
â
IC = -0.1 mA; VCE = -10V; note 1
35
IC = -1.0 mA; VCE = -10V
50
IC = -10 mA; VCE =- 10V
75
IC = -10 mA; VCE = -10V;Ta = -55OC 35
IC = -150 mA; VCE = -10V
100
IC = -150 mA; VCE = -1.0V
50
IC = -500 mA; VCE = -10V
40
IC = -150 mA; IB = -15 m A
â
IC = -500 mA; IB = -50 m A
â
IC = -150 mA; IB = -15 mA
-0.6
IC = -500 mA; IB = -50 mA
â
IE = ie = 0; VCB = - 5 V; f = 1 MHz â
IC = ic = 0; VBE = -500 mV;
â
f = 1 MHz
IC = -20 mA; VCE = - 2 0 V;
200
f = 100 MHz
IC = 100 µA; VCE = - 5 V; RS = 1 kâ¦; â
f = 1.0 kHz
Switching times (between 10% and 90% levels);
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = -150 mA; IBon = -15mA;
â
IBoff = â15 mA
â
â
â
â
â
Note
1. Pulse test: tp ⤠300 µs; δ ⤠0.02.
MAX.
-10
-10
-10
â
â
â
â
300
â
â
-400
-1.6
-1.3
-2.6
8
30
UNIT
nA
uA
nA
mV
V
V
V
pF
pF
â
MHz
4
dB
35
ns
10
ns
40
ns
100
ns
80
ns
30
ns
|
▷ |