CHT2907N1PT Datasheet, PDF (2/5 Pages) Chenmko Enterprise Co. Ltd. – PNP Switching Transistor

RATING CHARACTERISTIC CURVES ( CHT2907N1PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
357
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
F
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I_E = 0; V_CB = -60 V
−
I_C = 0; V_CB = -60 V; Tj = 125 ^OC
−
I_C = 0; V_EB = 5 V
−
IC = -0.1 mA; VCE = -10V; note 1
35
IC = -1.0 mA; VCE = -10V
50
IC = -10 mA; VCE =- 10V
75
IC = -10 mA; VCE = -10V;Ta = -55^OC 35
IC = -150 mA; VCE = -10V
100
IC = -150 mA; VCE = -1.0V
50
IC = -500 mA; VCE = -10V
40
I_C = -150 mA; I_B = -15 m A
−
I_C = -500 mA; I_B = -50 m A
−
I_C = -150 mA; I_B = -15 mA
-0.6
I_C = -500 mA; I_B = -50 mA
−
I_E = i_e = 0; V_CB = - 5 V; f = 1 MHz −
I_C = i_c = 0; V_BE = -500 mV;
−
f = 1 MHz
I_C = -20 mA; V_CE = - 2 0 V;
200
f = 100 MHz
I_C = 100 µA; V_CE = - 5 V; R_S = 1 kΩ; −
f = 1.0 kHz
Switching times (between 10% and 90% levels);
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = -150 mA; I_Bon = -15mA;
−
I_Boff = −15 mA
−
−
−
−
−
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
-10
-10
-10
−
−
−
−
300
−
−
-400
-1.6
-1.3
-2.6
8
30
UNIT
nA
uA
nA
mV
V
V
V
pF
pF
−
MHz
4
dB
35
ns
10
ns
40
ns
100
ns
80
ns
30
ns