CHT2302PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHT2302PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 250 µA
IDSS
Zero Gate Voltage Drain Current V_DS = 16 V, V_GS = 0 V
I GSS
Gate-Body Leakage
V_GS = 8 V, V_DS = 0 V
I GSS
Gate-Body Leakage
V_GS = -8 V, V_DS = 0 V
20
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th)
Gate Threshold Voltage
V_DS = V_GS, I_D = 250 µA
R_DS(ON)
VGS=4.5V, ID=3.6A
Static Drain-Source On-Resistance
VGS=2.5V, ID=3.1A
V_SD
Diose Forward Voltage
V_DS = V_GS, I_D = -250 µA
0.7
1.2
V
85
mΩ
115
1.0
V
SWITCHING CHARACTERISTICS ^{(Note 3)}
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
Note : 3. Guaranteed by design , not subject to production trsting
VDS=10V, ID=1A
VGS=4.5V
V_DD= 10V
ID = 1.0A, VGEN= 4.5 V
RL= 10 Ω , RGEN= 10 Ω
6.52
1.6
nC
1.16
12
36
nS
34
10