CHT2301PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – P-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHT2301PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = -250 µA
IDSS
Zero Gate Voltage Drain Current V_DS = -16 V, V_GS = 0 V
I GSS
Gate-Body Leakage
V_GS = 8 V, V_DS = 0 V
I GSS
Gate-Body Leakage
V_GS = -8 V, V_DS = 0 V
-20
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th)
Gate Threshold Voltage
V_DS = V_GS, I_D = -250 µA
R_DS(ON)
VGS=-4.5V, ID=-2.8A
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.0A
V_SD
Diose Forward Voltage
V_DS = 0V, I_S = -1.0 A
-0.6
V
130
mΩ
190
1.0
V
SWITCHING CHARACTERISTICS ^{(Note 3)}
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
Note : 3. Guaranteed by design , not subject to production trsting
VDS=-10V, ID=-1A
VGS=-4.5V
V_DD= -10V
ID = -1.0A, VGEN= -4.5 V
RL= 10 Ω , RGEN= 10 Ω
4.32
1.06
nC
0.84
13
36
nS
42
34