CHT200PPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN Epitaxial Transistor

RATING CHARACTERISTIC CURVES ( CHT200PPT )
CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )
PARAMETERS
CONDITION
Collector Cut-off Current
IE=0; VCB=40V
Emitter Cut-off Current
IC=0; VEB=8V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturatio Voltage
VCE=1V; Note 1
IC=500mA
IC=2.0A
IC=5.0A; VCE=2V
IC=500mA; IB=50mA
IC=2A; IB=200mA
IC=5A; IB=1A
IC=5A; IB=1A
Collector Capacitance
Transition Frequency
IE=ie=0; VCB=10V;
f=0.1MHz
IC=0.1A; VCE=10V;
f=10MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
CC
fT
MIN.
-
-
70
45
10
-
-
-
-
-
65
TYPE
-
-
-
-
-
-
-
-
-
-
-
MAX.
0.1
0.1
-
180
-
0.3
0.75
1.8
2.5
80
-
UNITS
uA
uA
Volts
Volts
pF
MHz