CHT2000ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT2000ZPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
IEBO
emitter cut-off current
h_FE
DC current gain
CONDITIONS
V_CB = 180 V
VEB=10V
IC = 100uA; VCE _{= 5V}
IC = 10mA; VCE = 5V
IC = 160mA; VCE =5V
MIN.
−
MAX.
500
UNIT
nA
−
100
nA
3000
−
3000
−
3000
−
V_CEsat
VBEON
collector-emitter saturation
voltage
base-emitter saturation voltage
I_C = 20 mA; IB =25uA
I_C =-80 mA; I_B = 40uA
I_C =160mA; I_B =100uA
VCE=5V,IC=160mA
−
0.9
V
−
1.1
V
−
1.2
V
−
2.0
V