CHT170PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHT170PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
V_GS = 0 V, I_D = 100 µA
V_DS = 60 V, V_GS = 0 V
I GSS
Gate-Body Leakage
V_GS = 15 V, V_DS = 0 V
I GSS
Gate-Body Leakage
V_GS = 15 V, V_DS = 0 V
60 70
V
1
µA
+10 µA
-10 µA
ON CHARACTERISTICS (Note 1)
V_GS(th)
Gate Threshold Voltage
V_DS = V_GS, I_D = -250 µA
R_{DS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID= 200 m A}
g FS
Forward Transconductance
V_DS = 10 V , _DS(on) I_D = 200 m A
0.8 2.1 3.0
V
5
Ω
80
mS
DYNAMIC CHARACTERISTICS
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
t on
Turn-On Time
t off
Turn-Off Time
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
V_DD = 25V
ID = 0.5A, _{VGS= -10 V, RGEN= 50 Ω}
22
40
11
30 ^pF
2.0
5
10
nS
10