CHT127ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – PNP SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT127ZPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CEO
ICBO
IEBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
h_FE
DC current gain
CONDITIONS
V_CE = -50 V
V_CB = -100 V
VEB=-5.0V
IC = -500 mA; VCE _{= -3V}
IC = -3.0A; VCE = -3V
MIN.
−
−
−
MAX.
-500
-200
-2.0
UNIT
uA
uA
mA
1000
−
1000
−
V_CEsat
VBEON
C_ob
fT
collector-emitter saturation
I_C = -3.0 A; IB =-12m A
−
voltage
I_C =--5.0A; I_B = -20 m A
−
base-emitter saturation voltage I_C =--3.0A; VCE=-3.0V
−
collector capacitance
transition frequency
I_E = i_e = 0; V_CB = - 1 0 V; f = 1 MHz −
I_C = -3.0A; V_CE = - 4 V;
4.0
f = 1.0 MHz
-2.0
-4.0
-2.5
300
−
V
V
V
pF
MHz