CHT122ZPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT122ZPT )
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CEO
ICBO
IEBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
h_FE
DC current gain
CONDITIONS
V_CE = 50 V
V_CB = 100 V
VEB=5.0V
IC = 500 mA; V CE_{= 3V}
IC = 3.0A; VCE = 3V
MIN.
−
−
−
MAX.
500
200
2.0
UNIT
uA
uA
mA
1000
−
1000
−
V_CEsat
VBEON
C_ob
fT
collector-emitter saturation
I_C = 3.0 A; IB =12m A
−
voltage
I_C =-5.0A; I_B = 20 m A
−
base-emitter saturation voltage I_C =-3.0A; VCE=3.0V
−
collector capacitance
transition frequency
I_E = i_e = 0; V_CB = 1 0 V; f = 1 MHz −
I_C = 3.0A; V_CE = 4 V;
4.0
f = 1.0 MHz
2.0
V
4.0
V
2.5
V
200
pF
−
MHz