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CHT1198PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – PNP Switching Transistor
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RATING CHARACTERISTIC CURVES ( CHT1198PT )
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise noted.
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCEsat
Cc
fT
PARAMETER
CONDITIONS
collector-base breakdown voltage IE = 0; IC =-50 uA
collector-emitter breakdown voltage IB = 0; IC =-2 mA
emitter-base breakdown voltage IC = 0; IE =-50 uA
collector cut-off current
IE = 0; VCB = - 50 V
emitter cut-off current
IC = 0; VEB = - 4 V
DC current gain
VCE = -3V; note 1
IC = -100 mA
collector-emitter saturation
voltage
IC = -500 mA, IB=-50 mA
collector capacitance
transition frequency
IE = ie = 0; VCB =-10 V ; f = 1 MHz
IE = 50 mA; VCE = - 1 0 V ;
f = 100 MHz
MIN.
-80
-80
-5
−
−
120
−
−
−
MAX.
−
−
−
-500
-500
390
-500
11Typ.
180Typ.
UNIT
V
V
V
nA
nA
mV
pF
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE: Q Gade: 120~270
R Gade: 180~390
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