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CHT100PT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – N-Channel Enhancement Mode Field Effect Transistor
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RATING CHARACTERISTIC CURVES ( CHT100PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 12 V, VDS = 0 V
VGS = -12 V, VDS = 0 V
30
TC=125°C
V
1
µA
10
µA
100 nA
-100 nA
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 1.0 µA
RDS(ON)
Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 A
VGS = 10 V, ID = 1.0 A
gFS
Forward Transconductance
VDS = 10 V , ID = 500 m A
1
3.0 V
0.17
0.24 Ω
1.3 2.4
S
DYNAMIC CHARACTERISTICS
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
tr
toff
Turn-Off Time
tf
VDS = 24 V, VGS = 10 V,
I D= 1.0 A
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
VDD = 10 V
ID = 500 mA, VGS = 5.0 V,
RGEN = 50 Ω
VDD = 10 V
ID = 500 mA, VGS = 5.0 V,
RGEN = 50 Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
VGS = 0 V, IF = 1.0 A
Voltage
5.5
nC
0.8
1.3
150
pF
90
30
10
nS
15
25
nS
45
540 mA
4.0 A
1.2 V
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