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CHT06UPNPT Datasheet, PDF (2/5 Pages) Chenmko Enterprise Co. Ltd. – NPN/PNP Silicon AF Transistor Array | |||
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RATING CHARACTERISTIC CURVES ( CHT06UPNPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
105
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÃed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
ICEO
hFE
VCEsat
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
IE = 0; VCB = 80 V
â
IC = 0; VCB = 80 V; TA = 150 OC
â
IC = 0; VCE = 6 0 V
â
IC = 10 mA; VCE = 1.0V; note 1
100
IC = 100 mA; VCE = 1.0V
100
IC = 100 mA; IB = 10 mA
â
VBE(ON)
Cc
Ce
fT
F
base-emitter saturation voltage IC = 100 mA; VCE = 1 V
â
collector capacitance
IE = ie = 0; VCB = 10V ; f = 1 MHz â
emitter capacitance
IC = ic = 0; VBE = 500 mV;
â
f = 1 MHz
transition frequency
IC = 20 mA; VCE = 5 V ;
100
f = 100 MHz
noise figure
IC = 100 µA; VCE = 5 V; RS = 1 kâ¦; â
f = 1.0 kHz
Note
1. Pulse test: tp ⤠300 µs; δ ⤠0.02.
MAX.
100
20
100
â
â
250
UNIT
nA
uA
nA
mV
1.2
V
12
pF
120
pF
â
MHz
4
dB
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