CHT05N1PT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – NPN General Purpose Transistor -

RATING CHARACTERISTIC CURVES ( CHT05N1PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
357
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
I_CBO
I_EBO
h_FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
V_CEsat
V_BEon
C_cb
f_T
collector-emitter saturation
voltage
base-emitter voltage
collector-base capacitance
transition frequency
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
I_E = 0; V_CB = 60 V
I_C = 0; V_EB = 4 V
V_CE = 1.0 V; note 1
I_C = 10 mA
I_C = 100 mA
MIN.
−
−
MAX.
0.1
0.1
UNIT
uA
uA
100
−
100
−
I_C = 100 mA; I _B =10 mA
−
I_C = 100 mA; V_CE = 1.0 V
−
I_E = i_e = 0; V_CB =10V; f = 1 MHz
−
I_C = 100 mA; V_CE =1.0 V ;
80
f = 100 MHz
0.25
V
1.2
V
10
pF
−
MHz