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| CHM9956AJPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – Dual N-Channel Enhancement Mode Field Effect Transistor | |||
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RATING CHARACTERISTIC CURVES ( CHM9956AJPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
30
V
1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
g FS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS=10V, ID=2.2A
VGS=4.5V, ID=1.0A
VDS =10V, ID = 3.7A
1
3V
60 80
mâ¦
80 110
3
6
S
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=10V, ID=3.7A
VGS=10V
VDD= 10V
ID = 1.0A, VGS= 10 V
RGEN= 6 â¦
8.5 11
1.5
nC
1.8
18 27
13 19
nS
35 50
5 10
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = 1.25A, VGS= 0 V(Note 2)
1.2 A
1.4 V
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