CHM9424JPT Datasheet, PDF (2/2 Pages) Chenmko Enterprise Co. Ltd. – P-Channel Enhancement Mode Field Effect Transistor

ELECTRICAL CHARACTERISTIC ( CHM9424JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -24 V, V_GS = 0 V
V_GS = 8V, V_DS = 0 V
V_GS = -8V, V_DS = 0 V
-20
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
VGS=-4.5V, ID=-7.7A
VGS=-2.5V, ID=-6.6A
V_DS = -10V, I_D = -7.7
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = -10V, V_GS = 0V,
f = 1.0 MHz
-0.6
-1
V
20 25
mΩ
29 35
23
S
2130
760
pF
127
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-6V, ID=-7.7A
VGS=-4.5V
V_DD= -6V
ID = -1.0A, VGS= -4.5 V
RGEN= 6 Ω
45 54
6
nC
14
60 80
90 130
nS
310 400
190 250
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -2.3A, VGS= 0 V (Note 2)
-2.3 A
-1.2 V