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CHM6861ZPT Datasheet, PDF (2/3 Pages) Chenmko Enterprise Co. Ltd. – P-Channel Enhancement Mode Field Effect Transistor
RATING CHARACTERISTIC CURVES ( CHM6861ZPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = -250 µA
VDS = -60 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
-60
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
g FS
Forward Transconductance
VDS = VGS, ID = -250 µA
VGS=-10V, ID=-3.1A
VGS=-4.5V, ID=-2.8A
VDS = -4.5V, ID = -2.8A
-1
-3
V
108 130
mΩ
140 170
7
S
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-30V, ID=-3.5A
VGS=-10V
VDD= -30V
ID = -1.0A, VGS= -10 V
RGEN= 6 Ω
11 14
2.3
nC
1.4
12 25
4
15
nS
38 80
12 25
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -1.3A, VGS= 0 V (Note 2)
-3.5 A
-1.2 V